Control of Switching Modes and Conductance Quantization in Memristive Devices - YouTube
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices: Oxygen stoichiometry engineering is intrinsically achieved in hafniumoxide-based memristive devices via reactive molecular beam epitaxy in a Pt/HfOx/TiN device configuration. This allows for uncovering the nature of complex coexistence of multiple switching modes (unipolar, bipolar, complementary, threshold) and occurrence of quantum conductance states. The findings are relevant to the control of switching dynamics in all oxide-based switching devices. This is reported by Sankaramangalam Ulhas Sharath, Stefan Vogel, Leopoldo Molina-Luna, Erwin Hildebrandt, Christian Wenger, Jose Kurian, Michael Duerrschnabel, Tore Niermann, Gang Niu, Pauline Calka, Michael Lehmann, Hans-Joachim Kleebe, Thomas Schroeder, and Lambert Alff in the article https://doi.org/10.1002/adfm.201700432. To know more, please go to the Advanced Functional Materials homepage.