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Amphetamine analogs are produced by plants in the genus Ephedra and by Catha edulis, and include the widely used decongestants and appetite suppressants pseudoephedrine and ephedrine. A combination of yeast (Candida utilis or Saccharomyces cerevisiae) fermentation and subsequent chemical modificatio …

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Methylephedrine | C11H17NO | CID 64782 - structure, chemical names, physical and chemical properties, classification, patents, literature, biological activities, safety/hazards/toxicity information, supplier lists, and more.

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Session: Significant efforts are being made to develop nanoscale electronic devices integrated into neuromorphic circuits capable of emulating...

Dr. Yakov Roizin of TowerJazz - Resistive Memories Promising for Industrial Applications - IEEE / ACRC Workshop on Memristors and Resistive Memory Devices and Applications in Computer Architecture and Brain-Inspired Systems. March 7, 2012 Technion Faculty of Electrical Engineering.

List of publications on this subject can be found at https://scholar.google.com/citations?user=bvSd44cAAAAJ&hl=en. I can be contacted via https://www.linkedin.com/in/dotrimar/

Read more at https://techxplore.com/news/2023-03-echo-state-graph-neural-networks-1.html In this video: The echo state layer for graph embedding. The hidden state of a node in the graph is updated with the projection of the node itself and the previous hidden state of the neighboring nodes, both are processed with the fix and random echo state layer implemented with random memristive array. Video Credit: Wang et al. Subscribe: https://www.youtube.com/c/Science-X-Network Join Science X channel to support our mission: https://www.youtube.com/c/Science-X-Network/join Thank you for helping our YouTube channel reach new heights! Hitting subscribe aids us in our mission to bring you the latest and greatest research news in science, medicine and technology.

Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices: Oxygen stoichiometry engineering is intrinsically achieved in hafniumoxide-based memristive devices via reactive molecular beam epitaxy in a Pt/HfOx/TiN device configuration. This allows for uncovering the nature of complex coexistence of multiple switching modes (unipolar, bipolar, complementary, threshold) and occurrence of quantum conductance states. The findings are relevant to the control of switching dynamics in all oxide-based switching devices. This is reported by Sankaramangalam Ulhas Sharath, Stefan Vogel, Leopoldo Molina-Luna, Erwin Hildebrandt, Christian Wenger, Jose Kurian, Michael Duerrschnabel, Tore Niermann, Gang Niu, Pauline Calka, Michael Lehmann, Hans-Joachim Kleebe, Thomas Schroeder, and Lambert Alff in the article https://doi.org/10.1002/adfm.201700432. To know more, please go to the Advanced Functional Materials homepage.

This tutorial has been part of the Conference on Neuromorphic Materials, Devices, Circuits and Systems (NeuMatDeCas) that took place from the 23rd to the 25th.